SSFM2506 25v n-channel mosfet www.goodark.com page 1 of 7 rev.1.2 main product characteristics: v dss 25v r ds (on) 4.1mohm(typ.) i d 60a features and benefits: description: absolute max rating: symbol parameter max. units id @ tc = 25c continuous drain current, vgs @ 10v 60 id @ tc = 100c continuous drain current, vgs @ 10v 50 idm pulsed drain current 130 ism pulsed source current (body diode) 130 a pd @tc = 25c power dissipation 45 w pd @tc =100c power dissipation 22 w vds drain-source voltage 25 v vgs gate-to-source voltage 20 v dv/dt peak diode recovery voltage 1.5 v/ns eas single pulse avalanche energy @ l=0.1mh 90 ear repetitive avalanche energy 228 mj iar avalanche current @ l=0.1mh 42 a tj tstg operating junction and storage temperature range -55 to + 175 c marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product it utilizes the latest frrmos (fast reverse recovery mos) trench processing techniques to achieve extremely low on resistance, fast switching speed and short reverse recovery time. these features combine to make this design an extremely efficient and reliable device for use in pwm, load switching and a wide variety of other applications.
SSFM2506 25v n-channel mosfet www.goodark.com page 2 of 7 rev.1.2 thermal resistance symbol characterizes value unit r jc junction-to-case 2.5 /w junction-to-ambient ( t 10s) 13 /w r ja junction-to-ambient (pcb mounted, steady-state) 36 /w electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions bvdss drain-to-source breakdown voltage 25 v vgs = 0v, id = 250a 4.1 6 rds(on) static drain-to-source on-resistance 6.5 m vgs=10v id = 30a tj = 125 1.2 1.9 2.5 vgs(th) gate threshold voltage 1.2 v vds = vgs, id = 250a tj = 125 10 vds = 25v, vgs = 0v idss drain-to-source leakage current 50 a vds = 25v, vgs = 0v, tj = 55c gate-to-source forward leakage 100 vgs =20v igss gate-to-source reverse leakage -100 na vgs = -20v qg total gate charge 35.8 40 qgs gate-to-source charge 3.8 6 qgd gate-to-drain("miller") charge 13.1 15 nc id = 30a, vds=12.5v, vgs = 10v td(on) turn-on delay time 10.5 tr rise time 65.7 td(off) turn-off delay time 27.0 tf fall time 8.2 ns vgs=10v, vds=12.5v, rl=0.42, rgen=3 ciss input capacitance 1732 coss output capacitance 512 crss reverse transfer capacitance 323 pf vgs = 0v, vds = 12.5v, ? = 1.0mhz rg gate resistance 1.4 vgs=0v,vds=0v, f=1mhz
SSFM2506 25v n-channel mosfet www.goodark.com page 3 of 7 rev.1.2 source-drain ratings and characteristics symbol parameter min. typ. max. units conditions is maximum body-diode continuous curren 60 a vsd diode forward voltage 0.69 1 v is=1a, vgs=0v trr reverse recovery time 18.3 ns qrr reverse recovery charge 6.4 nc tj = 25c, if =30a, di/dt = 150a/s test circuits and waveforms switch waveforms:
SSFM2506 25v n-channel mosfet www.goodark.com page 4 of 7 rev.1.2 typical electrical and thermal characteristics 0 20 40 60 80 100 0 1 2 3 4 5 vds,drain to source voltage(v) id,drain current(a) 10v 7v 6v 3.5v 4v 4.5v 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 vgs,gate to source voltage(v) id,drain current(a) 125 25 vds=5v 0 5 10 15 20 25 30 2 3 4 5 6 7 8 9 10 vgs,gate to source voltage(v) rdson,drain-to-source on resistance(normalized) 125 25 id=30a 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 vsd,source to drain voltage(v) is,source to drain current(a) 125 25 figure 2: typical transfer characteristics 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 id,drain current(a) rdson,drain-to-source on resistance vgs=4.5v vgs=10v 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 0 25 50 75 100 125 150 175 200 tj,junction temperature(c) rdson,drain-to-source on resistance(normalized) vgs=10v id=30a vgs=4.5v id=20a figure 1: typical output characteristics figure 5: on-resistance vs. gate-source voltage figure 6: body-diode characteristics figure 3: on-resistance vs. drain current and gate voltage figure 4: on-resistance vs. junction temperature
SSFM2506 25v n-channel mosfet www.goodark.com page 5 of 7 rev.1.2 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 tcase (c) power dissipation (w) 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 qg,gate charge(nc) vgs,gate to source voltage(v) vds=12.5v id=30a 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 vds, drain to source voltage(v) capacitance (pf) ciss coss crss vgs=0,f=1mhz ciss=cgd+cgs, cds shorted coss=cds+cgd crss=cgd 0.1 1 10 100 1000 0.01 0.1 1 10 100 vds,drain to source voltage(v) id,drain current(a) 10us 100us 1ms 10ms dc ron limited tj(max)=175 tc=25 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) power ( w) tj(max)=175 ta=25 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 tcase (c) id,drain current(a) figure 7: gate-charge characteristics figure figure 8: capacitance characteristics figure 9: maximum forward biased safe operating area figure 10: single pulse power rating junction-to-case figure 11: power de-rating figure 12: current de-rating
SSFM2506 25v n-channel mosfet www.goodark.com page 6 of 7 rev.1.2 typical electrical and thermal characteristics notes: the maximum current rating is limited by bond -wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction -to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of tj(max)=175c. the maximum current rating is limited by bond-wires. 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) zjc,transient thermal resistance( normalized ) duty cycle d= 0.5,0.3,0.1,0.05,0.01,single tj max pdm*z jc*r jc+tc r jc=2.5 /w t t p d=t p /t 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) zja,transient thermal resistance( normalized ) duty cycle d=0.5,0.3,0.1, 0.05,0.01,single tj max pdm*z ja*r ja+ta r ja=36 /w t t p d=t p /t figure 14: normalized maximum transient thermal impedance figure 13: normalized maximum transient thermal impedance
SSFM2506 25v n-channel mosfet www.goodark.com page 7 of 7 rev.1.2 mechanical data
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